advanced power n-channel enhancement mode electronics corp. power mosfet ease of paralleling bv dss 500v fast switching characteristic r ds(on) 0.85 simple drive requirement i d 8a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a maixmum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice 8 32 35 8 5.1 320 -55 to 150 201024071-1/4 20 rating 500 rohs-compliant product parameter IRF840I parameter storage temperature range -55 to 150 g d s a pec mosfet provide the power designer with the best combination of fast switching , lower on-resistance and reasonable g d s to-220cfm(i) the to-220cfm isolation package is widely preferred for commercial- industrial through hole applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 500 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =4.8a - - 0.85 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =4.8a - 4.2 - s i dss drain-source leakage current (t j =25 o c) v ds =500v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 3 i d =8a - 45 72 nc q gs gate-source charge v ds =400v - 7 - nc q gd gate-drain ("miller") charge v gs =10v - 25 - nc t d(on) turn-on delay time 3 v dd =250v - 12 - ns t r rise time i d =8a - 31 - ns t d(off) turn-off delay time r g =9.1 ? v gs =10v - 48 - ns t f fall time r d =31 -33- ns c iss input capacitance v gs =0v - 1250 2000 pf c oss output capacitance v ds =25v - 270 - pf c rss reverse transfer capacitance f=1.0mhz - 85 - pf r g gate resistance f=1.0mhz - 1.6 2.4 ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 IRF840I 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 4 8 12 16 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4.5v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =4.8a v g =10v 0 2 4 6 8 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 6 .0v 5.0v v g =4.5v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 IRF840I 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 1s 100us 1ms 10ms 100m 0 2 4 6 8 10 12 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =8a v ds =100v v ds =250v v ds =400v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge dc
package outline : to-220cfm millimeters min nom max a 4.50 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. package code IRF840I part number r logo date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3
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